International Executive Committee

Keiichi Kimura	Kyushu Institute of Technology, Japan
Jin-Goo Park	Hanyang University, Korea
Daniel Shen	BASF, Taiwan
Halbert Tam	JSR Micro Inc., USA
Gerfried Zwicker	Fraunhofer Institute for Silicon Technology, Germany

International Program Committee

S.V. Babu	Clarkson University, USA
S. Balakumar	Institute of Microelectronics, Singapore
Chao-Chang Chen	University of Science and Technology, Taiwan
Toshiro Doi	Saitama University, Japan
David Dornfeld	University of Berkeley, USA
Wei Yung Hsu	Applied Materials, USA
Haedo Jeong	Pusan National University, Korea
Masaharu Kinoshita	Nitta Haas Inc., Japan
Seiichi Kondo	Selete, Japan
Scott Lawing	Rohm & Haas, USA
Inkyung Lee	Cheil Industries Inc., Korea
Hitoshi Morinaga	Tohoku University, Japan
Chan-Kwon Oh	Doosan D&D, Korea
Hyung-Soon Park	Hynix, Korea
Maria Peterson	JSR Micro, USA
Mike Pevny	3M, USA
Ara Philipossian	University of Arizona, USA
Manabu Tsujimura	Ebara, Japan
Bo-Un Yoon	Samsung Electronics, Korea

Local Program Committee

Gerfried Zwicker (Conference Chairman)	Fraunhofer Institute for Silicon Technology, Germany
Johann W. Bartha	Dresden Technical University, Germany
Katrin Blum	IHP, Germany
Knut Gottfried	Fraunhofer IZM, Germany
Karl Hensen	BASF AG, Germany
Michael Kroell	Degussa, Germany
Martin Kulawski	VTT, Finland
Georg Mörsch	Peter Wolters AG, Germany
Uwe Stöckgen	AMD, Germany
Peter Thieme	Qimonda AG, Germany
Dorit Wecker	Infineon Technologies AG, Germany

International Advisory Board

Geun Min Choi	Hynix, Korea
Laertis Economikos	IBM, USA
Chang-Ki Hong	Samsung, Korea
Markus Keil	AMD, Germany
Sang-Yong Kim	Dongbu Electronics, Korea
Motoshu Miyajima	Fujitsu, Japan
Mansour Moinpour	Intel, USA
Yongsik Moon	AMD, USA
Stan Smith	TI, USA
Dorit Wecker	Infineon Technologies, Germany
Yohei Yamada	Hitachi, Japan